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  Datasheet File OCR Text:
 Semiconductor
STC352
NPN Silicon Transistor
Descriptions
* High current application * Audio power amplifier
Features
* High current : IC = 2A * Complementary pair with STA353
Ordering Information
Type NO. STC352 Marking STC352 Package Code MPT
Outline Dimensions
6.50.2
unit : mm
21.51.0
1.10.1
1.2 Max. 0.70 Max. 0.4~0.6
1
2
3
2.50.1. 5.00.2
12.5 Min.
8.50.2
PIN Connections 1. Emitter 2. Collector 3. Base
3.40.2
2.00.1
KST-B001-000
0.50.2
1
STC352
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Emitter Current Collector dissipation Junction temperature Storage temperature
(Ta=25C)
Symbol
VCBO VCEO VEBO IC IE PC Tj Tstg
Ratings
40 30 5 2 -2 1.2 150 -55~150
Unit
V V V A A W C C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Base-Emitter on voltage Collector-Emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE
*
Test Condition
IC=100A, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=2V, IC=500mA VCE=2V, IC=500mA IC=2A, IB=0.2A IC=1.5A, IB=0.03A VCE=5V, IC=500mA VCB=10V, IE=0, f=1MHz
Min. Typ. Max.
40 30 5 100 120 13 0.1 0.1 320 1 0.8 2 -
Unit
V V V A A V V MHz pF
VBE(ON) VCE(sat)1 VCE(sat)2 fT Cob
* : hFE rank / O : 100~200, Y : 160~320
KST-B001-000
2
STC352
Electrical Characteristic Curves
Fig. 1 hFE - IC Fig. 2 VCE(sat) - IC
Fig. 3 fT - IC
Fig. 4 COb - VR
KST-B001-000
3


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